[1]马成杰 沈健 吴弘.心脏植入式电子设备电极导线相关三尖瓣反流的研究进展[J].心血管病学进展,2025,(8):673.[doi:10.16806/j.cnki.issn.1004-3934.2025.08.001]
　MA Chengjie,SHENG Jian,WU Hong.Advances in Tricuspid Regurgitation Associated?ith Cardiac Implantable Electronic Device Electrode Leads[J].Advances in Cardiovascular Diseases,2025,(8):673.[doi:10.16806/j.cnki.issn.1004-3934.2025.08.001]
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心脏植入式电子设备电极导线相关三尖瓣反流的研究进展()

《心血管病学进展》[ISSN:51-1187/R/CN:1004-3934]

卷:
期数:
2025年8期
页码:
673
栏目:
综述
出版日期:
2025-08-25

文章信息/Info

Title:
Advances in Tricuspid Regurgitation Associated?ith Cardiac Implantable Electronic Device Electrode Leads
作者:
马成杰 沈健 吴弘
(海军军医大学第一附属医院心血管内科,上海 200433)
Author(s):
MA Chengjie; SHENG Jian; WU Hong
?Department of CardiologyThe First Affiliated Hospital of Naval Medical UniversityShanghai 200433China)
关键词:
心脏植入式电子设备; 三尖瓣反流; 电极导线
Keywords:
Cardiac implantable electronic device; Tricuspid regurgitation; Electrode lead
DOI:
10.16806/j.cnki.issn.1004-3934.2025.08.001
摘要:
心脏植入式电子设备（CIED）电极导线与三尖瓣瓣叶之间的相互作用可能是导致三尖瓣反流（TR）的主要原因，而TR又会影响患者心力衰竭的发病率和死亡率。研究发现，电极导线通过机械干扰、心室重塑及瓣环扩张等机制诱发或加重TR。目前，CIED植入后电极导线与TR进展之间的关系尚无定论。现综述CIED相关TR的流行病学特征、电极导线相关TR的发生机制和临床管理的研究进展，旨在阐明CIED对三尖瓣的影响及机制，减少CIED植入后电极导线对三尖瓣的影响，优化CIED治疗策略。
Abstract:
The interaction between cardiac implantable electronic device (CIED) leads and tricuspid valve leaflets may be a primary cause of tricuspid regurgitation (TR),which in turn affects the morbidity and mortality of heart failure in patients. Studies have shown that CIED leads induce or exacerbate TR through mechanisms such as mechanical interference,ventricular remodeling,and annular dilation. Currently,the relationship between CIED leads placement and TR progression remains inconclusive. This review summarizes recent advances in the epidemiological characteristics ,mechanisms,and clinical management of CIED-related TR. It aims to elucidate the impact and underlying mechanisms of CIEDs on the tricuspid valve,reduce lead-induced tricuspid valve dysfunction post-implantation,and optimize CIED therapeutic strategies

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更新日期/Last Update: 2025-11-11